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RoHs Compliant Lead-Free (Qualified up to 260C Reflow) l Application Specific MOSFETs l Ideal for CPU Core DC-DC Converters l Low Conduction Losses l High Cdv/dt Immunity l Low Profile (<0.7mm) l Dual Sided Cooling Compatible l Compatible with existing Surface Mount Techniques
l l
DirectFET Power MOSFET
Typical values (unless otherwise specified)
IRF6678PBF IRF6678TRPbF
RDS(on) Qgs2
4.0nC
PD - 97223
VDSS Qg
tot
VGS Qgd
15nC
RDS(on) Qoss
28nC
30V max 20V max 1.7m@ 10V 2.3m@ 4.5V
Qrr
46nC
Vgs(th)
1.8V
43nC
MX
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details) SQ SX ST MQ MX MT
DirectFET ISOMETRIC
Description
The IRF6678PBF combines the latest HEXFET(R) Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The IRF6678PBF balances industry leading on-state resistance while minimizing gate charge along with ultra low package inductance to reduce both conduction and switching losses. The reduced losses make this product ideal for high frequency/high efficiency DC-DC converters that power high current loads such as the latest generation of microprocessors. The IRF6678PBF has been optimized for parameters that are critical in synchronous buck converter's SyncFET sockets.
Absolute Maximum Ratings
Parameter
VDS VGS ID @ TA = 25C ID @ TA = 70C ID @ TC = 25C IDM EAS IAR
20
Typical RDS(on) (m)
Max.
Units
V
Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Single Pulse Avalanche Energy Avalanche CurrentAg
ID = 29A
g
e e f
h
VGS, Gate-to-Source Voltage (V)
30 20 30 24 150 240 210 24
6.0 5.0 4.0 3.0 2.0 1.0 0.0 0 10 20 30 40 50 ID= 23A VDS= 24V VDS= 15V
A
mJ A
15 10 5 0 0 1 2 T J = 25C 3 4 5 6 7 8 9 10 T J = 125C
60
VGS, Gate -to -Source Voltage (V) Fig 1. Typical On-Resistance vs. Gate Voltage
QG Total Gate Charge (nC)
Fig 2. Typical On-Resistance vs. Gate Voltage
Notes: Click on this section to link to the appropriate technical paper. Click on this section to link to the DirectFET Website. Surface mounted on 1 in. square Cu board, steady state.
TC measured with thermocouple mounted to top (Drain) of part. Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25C, L = 0.75mH, RG = 25, IAS = 23A.
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06/15/06
IRF6678PBF
Static @ TJ = 25C (unless otherwise specified)
Parameter
BVDSS VDSS/TJ RDS(on) VGS(th) VGS(th)/TJ IDSS IGSS gfs Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss RG td(on) tr td(off) tf Ciss Coss Crss Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge Gate-to-Drain Charge Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) Output Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
Min.
30 --- --- --- 1.35 --- --- --- --- --- 100 --- --- --- --- --- --- ---
---
Typ. Max. Units
--- 24 1.7 2.3 --- -6.3 --- --- --- --- --- 43 12 4.0 15 12 19 28 1.0 21 71 27 8.1 5640 1260 570 --- --- --- 2.2 --- --- --- --- --- --- --- pF ns nC
Conditions
VGS = 0V, ID = 250A
--- --- 2.2 3.0 2.25 --- 1.0 150 100 -100 --- 65 --- ---
V
mV/C Reference to 25C, ID = 1mA m VGS = 10V, ID = 30A i VGS = 4.5V, ID = 24A i V mV/C A nA S VDS = 24V, VGS = 0V VDS = 24V, VGS = 0V, TJ = 125C VGS = 20V VGS = -20V VDS = 15V, ID = 24A VDS = 15V nC VGS = 4.5V ID = 24A See Fig. 15 VDS = 16V, VGS = 0V VDD = 16V, VGS = 4.5V ID = 24A Clamped Inductive Load See Fig. 16 & 17 VGS = 0V VDS = 15V = 1.0MHz i VDS = VGS, ID = 250A
--- --- --- --- --- --- ---
Diode Characteristics
Parameter
IS ISM VSD trr Qrr Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) g Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge --- --- --- --- --- 0.78 43 46 240 1.2 65 69 V ns nC
Min.
---
Typ. Max. Units
--- 89 A
Conditions
MOSFET symbol showing the integral reverse p-n junction diode. TJ = 25C, IS = 24A, VGS = 0V i TJ = 25C, IF = 24A di/dt = 100A/s i See Fig. 18
Notes:
Repetitive rating; pulse width limited by max. junction temperature. Pulse width 400s; duty cycle 2%.
2
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IRF6678PBF
Absolute Maximum Ratings
PD @TA = 25C PD @TA = 70C PD @TC = 25C TP TJ TSTG Power Dissipation Power Dissipation Power Dissipation Peak Soldering Temperature Operating Junction and Storage Temperature Range
e e f
Parameter
Max.
2.8 1.8 89 270 -40 to + 150
Units
W
C
Thermal Resistance
RJA RJA RJA RJC RJ-PCB Junction-to-Ambient Junction-to-Ambient Junction-to-Ambient Junction-to-Case Junction-to-PCB Mounted Linear Derating Factor
em km lm fm
Parameter
Typ.
--- 12.5 20 --- 1.0 0.022
Max.
45 --- --- 1.4 ---
Units
C/W
eA
W/C
100
D = 0.50
Thermal Response ( Z thJA )
10
0.20 0.10 0.05 0.02 0.01
J J 1 R1 R1 2 R2 R2 R3 R3 3 R4 R4 A 1 2 3 4 4 A
1
Ri (C/W)
0.6784 17.299 17.566 9.4701
i (sec)
0.00086 0.57756 8.94000 106
0.1
0.01
SINGLE PULSE ( THERMAL RESPONSE )
Ci= i/Ri Ci i/Ri
Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthja + Tc
0.01 0.1 1 10 100
0.001 1E-006 1E-005 0.0001 0.001
t1 , Rectangular Pulse Duration (sec)
Fig 3. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Notes: Used double sided cooling , mounting pad. Mounted on minimum footprint full size board with metalized back and with small clip heatsink.
R is measured at TJ of approximately 90C.
Surface mounted on 1 in. square Cu (still air).
Mounted to a PCB with small clip heatsink (still air)
Mounted on minimum footprint full size board with metalized back and with small clip heatsink (still air)
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IRF6678PBF
1000
TOP VGS 10V 5.0V 4.5V 4.0V 3.5V 3.0V 2.8V 2.5V
1000
TOP VGS 10V 5.0V 4.5V 4.0V 3.5V 3.0V 2.8V 2.5V
ID, Drain-to-Source Current (A)
100
BOTTOM
ID, Drain-to-Source Current (A)
BOTTOM
100
10 2.5V
2.5V
60s PULSE WIDTH
1 0.1 1 Tj = 25C 10
10
60s PULSE WIDTH
Tj = 150C
100
1000
0.1
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
V DS, Drain-to-Source Voltage (V)
Fig 4. Typical Output Characteristics
1000 VDS = 15V 60s PULSE WIDTH 100 T J = 150C 10 T J = 25C T J = -40C
Fig 5. Typical Output Characteristics
1.5 ID = 29A
Typical RDS(on) (Normalized)
ID, Drain-to-Source Current ()
1.0
1
V GS = 10V V GS = 4.5V
0.1 1 2 3 4
0.5 -60 -40 -20 0 20 40 60 80 100 120 140 160 T J , Junction Temperature (C)
VGS, Gate-to-Source Voltage (V)
Fig 6. Typical Transfer Characteristics
100000
VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd
Fig 7. Normalized On-Resistance vs. Temperature
25 T J = 25C 20
Typical RDS(on) ( m)
C oss = C ds + C gd
C, Capacitance(pF)
10000 Ciss
15
Vgs = 3.0V Vgs = 3.5V Vgs = 4.0V Vgs = 4.5V Vgs = 5.0V Vgs = 10V
1000
Coss Crss
10
5
100 1 10 VDS, Drain-to-Source Voltage (V) 100
0 20 60 100 140 180 220 260
Fig 8. Typical Capacitance vs.Drain-to-Source Voltage
Fig 9. Normalized Typical On-Resistance vs. Drain Current and Gate Voltage
ID, Drain Current (A)
4
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IRF6678PBF
1000 1000 OPERATION IN THIS AREA LIMITED BY R DS(on) 100sec 100
ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A)
100
10 T J = 150C T J = 25C 1 T J = 40C VGS = 0V 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 VSD, Source-to-Drain Voltage (V)
10
1msec 10msec
1
T A = 25C
T J = 150C 0.1 0.01
Single Pulse 0.10 1.00 10.00 100.00
Fig 10. Typical Source-Drain Diode Forward Voltage
180
VGS(th) Gate threshold Voltage (V)
Fig11. Maximum Safe Operating Area
2.2
VDS, Drain-to-Source Voltage (V)
160 140
ID, Drain Current (A)
Limited By Package
2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 ID = 250A
120 100 80 60 40 20 0 25 50 75 100 125 150 T C , Case Temperature (C)
-75 -50 -25
0
25
50
75 100 125 150
T J , Temperature ( C )
Fig 12. Maximum Drain Current vs. Case Temperature
900
EAS , Single Pulse Avalanche Energy (mJ)
Fig 13. Threshold Voltage vs. Temperature
800 700 600 500 400 300 200 100 0 25 50 75
ID 8.7A 11A BOTTOM 23A TOP
100
125
150
Starting T J , Junction Temperature (C)
Fig 14. Maximum Avalanche Energy vs. Drain Current
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IRF6678PBF
Current Regulator Same Type as D.U.T.
Id Vds
50K 12V .2F .3F
Vgs
D.U.T. VGS
3mA
+ V - DS
Vgs(th)
IG
ID
Qgs1 Qgs2
Qgd
Qgodr
Current Sampling Resistors
Fig 15a. Gate Charge Test Circuit
Fig 15b. Gate Charge Waveform
V(BR)DSS
15V
tp
DRIVER
VDS
L
VGS RG
D.U.T
IAS
+ V - DD
A
20V
tp
0.01
I AS
Fig 16b. Unclamped Inductive Waveforms
Fig 16a. Unclamped Inductive Test Circuit
LD VDS
90%
+
VDD D.U.T VGS Pulse Width < 1s Duty Factor < 0.1%
VDS
10%
VGS
td(on) tr td(off) tf
Fig 17a. Switching Time Test Circuit
Fig 17b. Switching Time Waveforms
6
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IRF6678PBF
D.U.T
Driver Gate Drive
+
P.W.
Period
D=
P.W. Period VGS=10V
+
Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
*
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
-
-
+
RG
* * * * di/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test
VDD
VDD
+ -
Re-Applied Voltage
Body Diode
Forward Drop
Inductor Curent Inductor Current
Ripple 5% ISD
* VGS = 5V for Logic Level Devices Fig 18. Diode Reverse Recovery Test Circuit for N-Channel HEXFET(R) Power MOSFETs
DirectFET Substrate and PCB Layout, MX Outline (Medium Size Can, X-Designation).
Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET. This includes all recommendations for stencil and substrate designs.
G = GATE D = DRAIN S = SOURCE
D S G S D
D
D
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IRF6678PBF
DirectFET Outline Dimension, MX Outline (Medium Size Can, X-Designation).
Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET. This includes all recommendations for stencil and substrate designs.
DIMENSIONS
METRIC CODE A B C D E F G H J K L M R P MIN 6.25 4.80 3.85 0.35 0.68 0.68 1.38 0.80 0.38 0.88 2.28 0.616 0.020 0.08 MAX 6.35 5.05 3.95 0.45 0.72 0.72 1.42 0.84 0.42 1.01 2.41 0.676 0.080 0.17 IMPERIAL MIN 0.246 0.189 0.152 0.014 0.027 0.027 0.054 0.032 0.015 0.035 0.090 0.0235 0.0008 0.003 MAX 0.250 0.201 0.156 0.018 0.028 0.028 0.056 0.033 0.017 0.039 0.095 0.0274 0.0031 0.007
DirectFET Part Marking
8
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IRF6678PBF
DirectFET Tape & Reel Dimension (Showing component orientation).
NOTE: Controlling dimensions in mm Std reel quantity is 4800 parts. (ordered as IRF6678TRPBF). For 1000 parts on 7" reel, order IRF6678TR1PBF STANDARD OPTION METRIC CODE MIN MAX A 330.0 N.C B 20.2 N.C C 12.8 13.2 D 1.5 N.C E 100.0 N.C F N.C 18.4 G 12.4 14.4 H 11.9 15.4 REEL DIMENSIONS (QTY 4800) TR1 OPTION (QTY 1000) IMPERIAL IMPERIAL METRIC MIN MAX MIN MAX MIN MAX 6.9 N.C 12.992 N.C 177.77 N.C 0.75 0.795 N.C N.C 19.06 N.C 0.53 0.504 0.50 13.5 0.520 12.8 0.059 0.059 N.C 1.5 N.C N.C 2.31 3.937 N.C 58.72 N.C N.C N.C N.C 0.53 N.C 0.724 13.50 0.47 0.488 11.9 N.C 0.567 12.01 0.47 0.469 11.9 N.C 0.606 12.01
LOADED TAPE FEED DIRECTION
CODE A B C D E F G H
DIMENSIONS METRIC IMPERIAL MIN MAX MIN MAX 0.311 0.319 7.90 8.10 0.154 0.161 3.90 4.10 0.469 0.484 11.90 12.30 0.215 0.219 5.45 5.55 0.201 0.209 5.10 5.30 0.256 0.264 6.50 6.70 0.059 N.C 1.50 N.C 0.059 0.063 1.50 1.60
Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 06/06
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Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/

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